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| Product Bulletin OP602TX/V September 1996 Hi-Reliability NPN Silicon Phototransistors Types OP602TX/V, OP603TX/V, OP604TX/V, OP604S Features *Processed to Optek' military s screening program patterned after MIL-PRF-19500 *Miniature hermetically sealed package *Wide range of collector currents *Ideal for direct mounting in PC boards Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 C to +150 C o o Operating Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 C to +125 C Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Emitter-Collector Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0 V o (1) Soldering Temperature (for 5 seconds with soldering iron) . . . . . . . . . . . . . 240 C (2) Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mW Notes: (1) No-clean or low solids, RMA flux is recommended. Duration can be extended to 10 sec. max. when wave soldering. (2) Derate linearly 0.5 mW/o C above 25o C. (3) Junction temperature maintained at 25o C. (4) Light source is an unfiltered tungsten lamp operating at CT = 2870 K or equivalent source. o o Description Each device in this series consists of a high reliability NPN silicon phototransistor mounted in a miniature glass lensed, hermetically sealed, " Pill" package. After electrical testing by manufacturing, all devices are processed to Optek' s 100% screening program patterned after MIL-PRF-19500. Typical screening and lot acceptance tests are provided on page 13-4. This device type is lensed and has an acceptance half angle of 18o measured from the optical axis to the half power point. The series is also mechanically and spectrally matched to the OP223 and OP224 high reliability series of infrared emitting diodes. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 13-30 (972) 323-2200 Fax (972) 323-2396 Types OP602TX/V, OP603TX/V, OP604TX/V, OP604S Electrical Characteristics (TA = 25o C unless otherwise noted) Symbol Parameter On-State Collector Current OP602TX,TXV OP603TX,TXV OP604TX,TXV, S Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Min Typ Max 2.0 4.0 7.0 Units mA mA mA nA A V V Test Conditions VCE = 5.0 V, Ee = 20 mW/cm2(3)(4) VCE = 5.0 V, Ee = 20 mW/cm2(3)(4) VCE = 5.0 V, Ee = 20 mW/cm2(3)(4) VCE = 10.0 V, Ee = 0 VCE = 30.0 V, Ee = 0, TA = 100o C IC = 100 A, Ee = 0 IE = 100 A, Ee = 0 IC = 0.4 mA, Ee = 20 mW/cm2(3)(4) VCC = 30 V, IC = 1.00 mA, RL = 100 IC(on) 5.0 8.0 25 100 ICEO V(BR)CEO V(BR)ECO VCE(SAT) tr tf 50 7.0 0.40 20.0 20.0 V s s Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 13-31 |
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